Open AccessResearch of influence Al on luminescence and dark current-voltage characteristics of InAs/GaAs heterostructures
Author(s) -
А. С. Пащенко,
E. Danilina,
Н. М. Богатов
Publication year - 2018
Publication title -
journal of physics. conference series
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.21
H-Index - 85
eISSN - 1742-6596
pISSN - 1742-6588
DOI - 10.1088/1742-6596/1124/2/022021
Subject(s) - heterojunction , photoluminescence , optoelectronics , quantum tunnelling , quantum dot , dark current , materials science , band gap , quantum well , luminescence , molecular beam epitaxy , nanotechnology , physics , optics , photodetector , laser , epitaxy , layer (electronics)