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Effect of precursor flow rate on physical and mechanical properties of a-C:H:SiO x films deposited by PACVD method
Author(s) -
A. S. Grenadyorov,
К. В. Оскомов,
N. F. Kovsharov,
A. A. Solovyev
Publication year - 2018
Publication title -
journal of physics. conference series
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.21
H-Index - 85
eISSN - 1742-6596
pISSN - 1742-6588
DOI - 10.1088/1742-6596/1115/4/042046
Subject(s) - materials science , nanoindentation , elastic modulus , composite material , chemical vapor deposition , raman spectroscopy , fourier transform infrared spectroscopy , substrate (aquarium) , plasma enhanced chemical vapor deposition , thin film , analytical chemistry (journal) , nanotechnology , chemical engineering , optics , chemistry , physics , oceanography , engineering , chromatography , geology

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