Open AccessDistribution profiles of radiation donor defects in arsenic-implanted HgCdTe films
Author(s) -
А. В. Войцеховский,
І. І. Іжнін,
I.I. Syvorotka,
A. G. Korotaev,
K. D. Mynbaev,
В. С. Варавин,
S. A. Dvoretsky,
D. V. Marin,
Н. Н. Михайлов,
V. G. Remesnik,
M. V. Yakushev
Publication year - 2018
Publication title -
journal of physics. conference series
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.21
H-Index - 85
eISSN - 1742-6596
pISSN - 1742-6588
DOI - 10.1088/1742-6596/1115/3/032063
Subject(s) - arsenic , materials science , molecular beam epitaxy , optoelectronics , ion implantation , radiation , electron mobility , analytical chemistry (journal) , ion , epitaxy , chemistry , nanotechnology , optics , metallurgy , physics , organic chemistry , layer (electronics) , chromatography