
Sn-nanothreads in GaAs matrix and their sub- and terahertz applications
Author(s) -
Д. С. Пономарев,
D. V. Lavrukhin,
A. E. Yachmenev,
Р. А. Хабибуллин,
I. E. Semenikhin,
V. Vyurkov,
M. Ryzhii,
T. Otsuji,
V. Ryzhii
Publication year - 2018
Publication title -
journal of physics. conference series
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.21
H-Index - 85
eISSN - 1742-6596
pISSN - 1742-6588
DOI - 10.1088/1742-6596/1092/1/012166
Subject(s) - terahertz radiation , high electron mobility transistor , optoelectronics , responsivity , materials science , anisotropy , electron , gallium arsenide , heterojunction , quantum well , bolometer , condensed matter physics , physics , transistor , optics , voltage , laser , quantum mechanics , detector , photodetector