
Effect of Different UV Light Intensity on Porous Silicon Fabricated by Using Alternating Current Photo-Assisted Electrochemical Etching (ACPEC) Technique
Author(s) -
Siti Nurfarhana Sohimee,
Z. Hassan,
Naser M. Ahmed,
Lim Way Foong,
Quah Hock Jin
Publication year - 2018
Publication title -
journal of physics. conference series
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.21
H-Index - 85
eISSN - 1742-6596
pISSN - 1742-6588
DOI - 10.1088/1742-6596/1083/1/012034
Subject(s) - porous silicon , materials science , silicon , etching (microfabrication) , crystallite , polycrystalline silicon , ultraviolet , surface roughness , light intensity , ultraviolet light , analytical chemistry (journal) , surface finish , porosity , intensity (physics) , optoelectronics , optics , nanotechnology , chemistry , composite material , layer (electronics) , metallurgy , physics , chromatography , thin film transistor