Open AccessBand gap behavior of thallium phosphide and gallium phosphide binary compounds and Gax Tl1-x P ternary alloys
Author(s) -
M. Merabet,
L. Djoudi,
M. Sayah,
S. Benalia,
D. Rached
Publication year - 2018
Publication title -
journal of physics. conference series
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.21
H-Index - 85
eISSN - 1742-6596
pISSN - 1742-6588
DOI - 10.1088/1742-6596/1081/1/012011
Subject(s) - gallium phosphide , ternary operation , phosphide , density functional theory , tin , materials science , band gap , indium phosphide , atomic orbital , gallium , binary number , crystallography , chemistry , computational chemistry , metallurgy , metal , mathematics , physics , gallium arsenide , optoelectronics , nuclear physics , computer science , arithmetic , programming language , electron