Open AccessThe charge islands SOI LDMOS with back-side etching technology
Author(s) -
Qi Li,
Zhaoyang Zhang,
Tangyou Sun,
Haiou Li,
Yonghe Chen,
Zhen-Sheng Yuan
Publication year - 2018
Publication title -
journal of physics. conference series
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.21
H-Index - 85
eISSN - 1742-6596
pISSN - 1742-6588
DOI - 10.1088/1742-6596/1074/1/012016
Subject(s) - ldmos , silicon on insulator , etching (microfabrication) , materials science , optoelectronics , breakdown voltage , dielectric , voltage , electrical engineering , silicon , engineering , nanotechnology , layer (electronics)