Open AccessThe investigation of InGaAs quantum dot growth peculiarities for GaAs intermediate band solar cells
Author(s) -
R. A. Salii,
S. A. Mintairov,
M. A. Mintairov,
A. M. Nadtochiy,
М. Z. Shvarts,
N. A. Kalyuzhnyy
Publication year - 2018
Publication title -
journal of physics. conference series
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.21
H-Index - 85
eISSN - 1742-6596
pISSN - 1742-6588
DOI - 10.1088/1742-6596/1038/1/012110
Subject(s) - quantum dot , metalorganic vapour phase epitaxy , optoelectronics , materials science , photoluminescence , solar cell , epitaxy , gallium arsenide , layer (electronics) , quantum well , nanotechnology , optics , laser , physics