z-logo
open-access-imgOpen Access
Photocathodes for near infrared range devices based on InP/InGaAs heterostructures
Author(s) -
K. J. Smirnov,
В. В. Давыдов,
С. Ф. Глаголев,
N S Rodygina,
N. V. Ivanova
Publication year - 2018
Publication title -
journal of physics. conference series
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.21
H-Index - 85
eISSN - 1742-6596
pISSN - 1742-6588
DOI - 10.1088/1742-6596/1038/1/012102
Subject(s) - indium phosphide , heterojunction , optoelectronics , photoelectric effect , materials science , infrared , diode , indium , phosphide , range (aeronautics) , optics , gallium arsenide , physics , nickel , metallurgy , composite material

The content you want is available to Zendy users.

Already have an account? Click here to sign in.
Having issues? You can contact us here