Open AccessEffect of Ga+ focused ion beam etching on photoluminescence of AlGaAs/GaAs heterostructure.
Author(s) -
G. V. Voznyuk,
I. V. Levitskii,
М. И. Митрофанов,
D. N. Nikolaev,
V. P. Evtikhiev
Publication year - 2018
Publication title -
journal of physics. conference series
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.21
H-Index - 85
eISSN - 1742-6596
pISSN - 1742-6588
DOI - 10.1088/1742-6596/1038/1/012080
Subject(s) - heterojunction , materials science , photoluminescence , optoelectronics , annealing (glass) , etching (microfabrication) , gallium arsenide , luminescence , quantum efficiency , isotropic etching , focused ion beam , ion beam , reactive ion etching , ion , nanotechnology , chemistry , composite material , layer (electronics) , organic chemistry