Open AccessKinetic limitations of stress relaxation and generation in GaN/AlN and AlGaN: Si/AlN heterostructures grown on c-sapphire by plasma-assisted molecular beam epitaxy
Author(s) -
O. A. Koshelev,
Д. В. Нечаев,
S. I. Troshkov,
В. В. Ратников,
V. N. Jmerik,
С. В. Иванов
Publication year - 2018
Publication title -
journal of physics. conference series
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.21
H-Index - 85
eISSN - 1742-6596
pISSN - 1742-6588
DOI - 10.1088/1742-6596/1038/1/012061
Subject(s) - materials science , molecular beam epitaxy , sapphire , heterojunction , stress relaxation , stress (linguistics) , doping , relaxation (psychology) , metalorganic vapour phase epitaxy , optoelectronics , epitaxy , composite material , optics , laser , layer (electronics) , psychology , social psychology , linguistics , creep , physics , philosophy