Open AccessCompact Model of Short-channel Cylindrical ballistic Gate-All-Around MOSFET Including the Source-to-drain Tunneling
Author(s) -
Cheng He,
Z Zhang,
Zhijia Yang,
Z Liu
Publication year - 2018
Publication title -
journal of physics. conference series
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.21
H-Index - 85
eISSN - 1742-6596
pISSN - 1742-6588
DOI - 10.1088/1742-6596/1026/1/012011
Subject(s) - quantum tunnelling , mosfet , channel length modulation , channel (broadcasting) , optoelectronics , materials science , drain induced barrier lowering , ballistic conduction , short channel effect , physics , electrical engineering , gate oxide , engineering , transistor , quantum mechanics , voltage , electron