Open AccessInfluence of geometrical and electrical parameters of masking layers on the electrochemical etching of silicon for single trench formation
Author(s) -
Gaël Gautier,
L. Ventura,
R. Jérisian
Publication year - 2005
Publication title -
journal of physics. conference series
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.21
H-Index - 85
eISSN - 1742-6596
pISSN - 1742-6588
DOI - 10.1088/1742-6596/10/1/062
Subject(s) - trench , masking (illustration) , materials science , silicon , etching (microfabrication) , enhanced data rates for gsm evolution , electrolyte , optoelectronics , optics , composite material , electrode , chemistry , computer science , layer (electronics) , physics , art , telecommunications , visual arts