Open AccessEpitaxial graphene for quantum resistance metrology
Author(s) -
Mattias Kruskopf,
Randolph E. Elmquist
Publication year - 2018
Publication title -
metrologia
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.637
H-Index - 79
eISSN - 1681-7575
pISSN - 0026-1394
DOI - 10.1088/1681-7575/aacd23
Subject(s) - metrology , graphene , ohm , quantum hall effect , fabrication , nanotechnology , materials science , quantum metrology , monolayer , optoelectronics , engineering physics , quantum , computer science , physics , quantum technology , electrical engineering , optics , engineering , quantum mechanics , medicine , alternative medicine , pathology , open quantum system , electron
Graphene-based quantised Hall resistance standards promise high precision for the unit ohm under less exclusive measurement conditions, enabling the use of compact measurement systems. To meet the requirements of metrological applications, national metrology institutes developed large-area monolayer graphene growth methods for uniform material properties and optimized device fabrication techniques. Precision measurements of the quantized Hall resistance showing the advantage of graphene over GaAs-based resistance standards demonstrate the remarkable achievements realized by the research community. This work provides an overview over the state-of-the-art technologies in this field.