Open AccessTransport properties of molecularly stabilized porous silicon schottky junctions
Author(s) -
M. K. Rabinal,
B. G. Mulimani
Publication year - 2007
Publication title -
new journal of physics
Language(s) - Uncategorized
Resource type - Journals
SCImago Journal Rank - 1.584
H-Index - 190
ISSN - 1367-2630
DOI - 10.1088/1367-2630/9/12/440
Subject(s) - passivation , porous silicon , silicon , chemical physics , physics , schottky barrier , quantum tunnelling , schottky diode , charge (physics) , optoelectronics , molecule , condensed matter physics , nanotechnology , materials science , layer (electronics) , diode , quantum mechanics