Open AccessNitrogen-enhanced indium segregation in (Ga,In)(N,As)/GaAs multiple quantum wells grown by molecular-beam epitaxy
Author(s) -
E. Luna,
A. Trampert,
E.M. Pavelescu,
M. Pessa
Publication year - 2007
Publication title -
new journal of physics
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 1.584
H-Index - 190
ISSN - 1367-2630
DOI - 10.1088/1367-2630/9/11/405
Subject(s) - indium , molecular beam epitaxy , transmission electron microscopy , quantum well , physics , dark field microscopy , nitrogen , alloy , epitaxy , lattice (music) , analytical chemistry (journal) , optoelectronics , materials science , optics , microscopy , nanotechnology , chemistry , metallurgy , laser , layer (electronics) , quantum mechanics , chromatography , acoustics