Open AccessIn-field performance and flux pinning mechanism of pulsed laser deposition grown BaSnO3/GdBa2Cu3O7–δ nanocomposite coated conductors by SuperOx
Author(s) -
Mayraluna Lao,
Roland Willa,
Alexander Meledin,
Hannes Rijckaert,
Vsevolod Chepikov,
S. Lee,
Valery Petrykin,
Isabel Van Driessche,
Alexander Molodyk,
B. Holzäpfel,
Jens Hänisch
Publication year - 2019
Publication title -
superconductor science and technology/superconductor science and technology
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 1.033
H-Index - 105
eISSN - 1361-6668
pISSN - 0953-2048
DOI - 10.1088/1361-6668/ab2a95
Subject(s) - materials science , flux pinning , pulsed laser deposition , pinning force , condensed matter physics , electrical conductor , vortex , transmission electron microscopy , field (mathematics) , scaling , nanocomposite , superconductivity , deposition (geology) , high temperature superconductivity , nanotechnology , critical current , thin film , composite material , physics , thermodynamics , geometry , paleontology , mathematics , sediment , biology , pure mathematics
We investigate the field, angle and temperature dependence of the full-width critical current, I c , of pulsed laser deposition-grown GdBa 2 Cu 3 O 7 coated conductors with and without additional 6 mol% BaSnO 3 (BSO) nanoparticles fabricated by SuperOx. The transport characteristics measured from 7 to 77 K and in applied magnetic fields of up to 6 T are complemented by scanning transmission electron microscopy. This combined approach allows for further insight into the vortex pinning mechanism and helps with understanding the enhancement in I c . An exemplary scaling of the pinning force curves versus field at different temperatures confirms the additional contribution to pinning by the BSO nanoparticles. Through the temperature dependence of I c , the weak and strong pinning contributions are determined: strong pinning dominates over almost the entire temperature range especially near the matching field of 1 T, where the largest enhancement in I c is achieved.