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A drain extended FinFET with enhanced DC/RF performance for high-voltage RF applications
Author(s) -
Kyounghwan Oh,
Hyangwoo Kim,
Kangwook Park,
Lee Hyung-jin,
Byoung Don Kong,
ChangKi Baek
Publication year - 2022
Publication title -
semiconductor science and technology
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.712
H-Index - 112
eISSN - 1361-6641
pISSN - 0268-1242
DOI - 10.1088/1361-6641/ac93ac
Subject(s) - transconductance , voltage , radio frequency , optoelectronics , transistor , electrical engineering , oscillation (cell signaling) , threshold voltage , materials science , breakdown voltage , physics , chemistry , engineering , biochemistry

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