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We report a high-performance GaN Schottky barrier diode (SBD) on a sapphire substrate with a novel post-mesa nitridation technique and its application in a high-power microwave detection circuit. The fabricated SBD achieved a very high forward current density of 9.19 kA cm −2  at 3 V, a low specific on-resistance ( R ON,sp ) of 0.22 mΩ cm 2  and breakdown voltage of 106 V. An extremely high output current of 400 mA was obtained when the detected power reached 38.4 dBm@3 GHz in pulsed-wave mode with a small anode diameter of 70  μ m. Meanwhile, broadband detection at frequencies ranging from 1 to 6 GHz was achieved at 33 dBm in continuous-wave mode.

High-power and broadband microwave detection with a quasi-vertical GaN Schottky barrier diode by novel post-mesa nitridation