The impurity size-effect and phonon deformation potentials in wurtzite GaN | Zendy

Elias Kluth | Zendy; Matthias Wieneke | Zendy; J. Bläsing | Zendy; H. De Witte | Zendy; Karsten Lange | Zendy; A. Dadgar | Zendy; R. Goldhahn | Zendy; Martin Feneberg | Zendy

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The impurity size-effect and phonon deformation potentials in wurtzite GaN

Author(s) -

Elias Kluth,

Matthias Wieneke,

J. Bläsing,

H. De Witte,

Karsten Lange,

A. Dadgar,

R. Goldhahn,

Martin Feneberg

Publication year - 2020

Publication title -

semiconductor science and technology

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 0.712

H-Index - 112

eISSN - 1361-6641

pISSN - 0268-1242

DOI - 10.1088/1361-6641/ab9fab

Subject(s) - wurtzite crystal structure , materials science , doping , physics , diffraction , optics , optoelectronics

Doping induced changes in lattice parameters are investigated experimentally for the shallow donors silicon and germanium in thin-film wurtzite a-plane GaN. Silicon doping results in a lattice contraction while germanium doping results in a small but measurable lattice expansion. By high-resolution x-ray diffraction, we are able to determine the isotropically averaged size-effect with high accuracy. The analysis procedure yields en passant results for the phonon deformation potentials c E 1 ( T O ) and c E 2 h .

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