Surface termination and Schottky-barrier formation of In4Se3(001)
Author(s) -
Archit Dhingra,
P. V. Galiy,
Lu Wang,
Nataliia S. Vorobeva,
Alexey Lipatov,
Angel Torres,
T. M. Nenchuk,
Simeon Gilbert,
Alexander Sinitskii,
Andrew J. Yost,
WaiNing Mei,
Keisuke Fukutani,
JiaShiang Chen,
P. A. Dowben
Publication year - 2020
Publication title -
semiconductor science and technology
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.712
H-Index - 112
eISSN - 1361-6641
pISSN - 0268-1242
DOI - 10.1088/1361-6641/ab7e45
Subject(s) - schottky barrier , photoemission spectroscopy , work function , schottky diode , semiconductor , chemistry , schottky effect , spectroscopy , electron diffraction , metal–semiconductor junction , low energy electron diffraction , materials science , condensed matter physics , x ray photoelectron spectroscopy , diffraction , metal , optoelectronics , optics , physics , nuclear magnetic resonance , organic chemistry , diode , quantum mechanics
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