Open AccessLight-biased IV characteristics of a GaAsBi/GaAs multiple quantum well pin diode at low temperature
Author(s) -
Robert D. Richards,
Thomas B. O. Rockett,
Mohd Nawawi,
Faezah Harun,
A. Mellor,
Terence Wilson,
C Christou,
S Chen,
J.P.R. David
Publication year - 2018
Publication title -
semiconductor science and technology
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.712
H-Index - 112
eISSN - 1361-6641
pISSN - 0268-1242
DOI - 10.1088/1361-6641/aad72a
Subject(s) - valence band , trapping , optoelectronics , quantum well , materials science , diode , photovoltaic system , offset (computer science) , solar cell , quantum , physics , band gap , optics , electrical engineering , computer science , ecology , laser , quantum mechanics , biology , programming language , engineering