The dose response of PTW microDiamond and microSilicon in transverse magnetic field under small field conditions

The aim of the present work is to investigate the behavior of two diode-type detectors (PTW microDiamond 60019 and PTW microSilicon 60023) in transverse magnetic field under small field conditions. A formalism based on TRS 483 has been proposed serving as the framework for the application of these high-resolution detectors under these conditions. Measurements were performed at the National Metrology Institute of Germany (PTB, Braunschweig) using a research clinical linear accelerator facility. Quadratic fields corresponding to equivalent square field sizes S between 0.63 and 4.27 cm at the depth of measurement were used. The magnetic field strength was varied up to 1.4 T. Experimental results have been complemented with Monte Carlo simulations up to 1.5 T. Detailed simulations were performed to quantify the small field perturbation effects and the influence of detector components on the dose response. The does response of both detectors decreases by up to 10% at 1.5 T in the largest field size investigated. In S  = 0.63 cm, this reduction at 1.5 T is only about half of that observed in field sizes S  > 2 cm for both detectors. The results of the Monte Carlo simulations show agreement better than 1% for all investigated conditions. Due to normalization at the machine specific reference field, the resulting small field output correction factors for both detectors in magnetic field k Q clin , Q msr B are smaller than those in the magnetic field-free case, where correction up to 6.2% at 1.5 T is required for the microSilicon in the smallest field size investigated. The volume-averaging effect of both detectors was shown to be nearly independent of the magnetic field. The influence of the enhanced-density components within the detectors has been identified as the major contributors to their behaviors in magnetic field. Nevertheless, the effect becomes weaker with decreasing field size that may be partially attributed to the deficiency of low energy secondary electrons originated from distant locations in small fields.