Open AccessInfluence of B/N co-doping on electrical and photoluminescence properties of CVD grown homoepitaxial diamond films
Author(s) -
K. Srinivasu,
Mateusz Ficek,
Aleksandra Wieloszyńska,
Magdalena TamulewiczSzwajkowska,
Krzysztof Gajewski,
Mirosław Sawczak,
Aneta Lewkowicz,
Jacek Ryl,
T. Gotszalk,
Robert Bogdanowicz
Publication year - 2021
Publication title -
nanotechnology
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.926
H-Index - 203
eISSN - 1361-6528
pISSN - 0957-4484
DOI - 10.1088/1361-6528/ac4130
Subject(s) - materials science , diamond , chemical vapor deposition , doping , x ray photoelectron spectroscopy , hillock , raman spectroscopy , photoluminescence , analytical chemistry (journal) , surface roughness , material properties of diamond , boron , nanotechnology , optoelectronics , chemical engineering , composite material , optics , chemistry , physics , organic chemistry , chromatography , engineering
Boron doped diamond (BDD) has great potential in electrical, and electrochemical sensing applications. The growth parameters, substrates, and synthesis method play a vital role in the preparation of semiconducting BDD to metallic BDD. Doping of other elements along with boron (B) into diamond demonstrated improved efficacy of B doping and exceptional properties. In the present study, B and nitrogen (N) co-doped diamond has been synthesized on single crystalline diamond (SCD) IIa and SCD Ib substrates in a microwave plasma-assisted chemical vapor deposition process. The B/N co-doping into CVD diamond has been conducted at constant N flow of N/C ∼ 0.02 with three different B/C doping concentrations of B/C ∼ 2500 ppm, 5000 ppm, 7500 ppm. Atomic force microscopy topography depicted the flat and smooth surface with low surface roughness for low B doping, whereas surface features like hillock structures and un-epitaxial diamond crystals with high surface roughness were observed for high B doping concentrations. KPFM measurements revealed that the work function (4.74–4.94 eV) has not varied significantly for CVD diamond synthesized with different B/C concentrations. Raman spectroscopy measurements described the growth of high-quality diamond and photoluminescence studies revealed the formation of high-density nitrogen-vacancy centers in CVD diamond layers. X-ray photoelectron spectroscopy results confirmed the successful B doping and the increase in N doping with B doping concentration. The room temperature electrical resistance measurements of CVD diamond layers (B/C ∼ 7500 ppm) have shown the low resistance value ∼9.29 Ω for CVD diamond/SCD IIa, and the resistance value ∼16.55 Ω for CVD diamond/SCD Ib samples.