Open AccessDroplet epitaxy of InAs/InP quantum dots via MOVPE by using an InGaAs interlayer
Author(s) -
Elisa M. Sala,
Max Godsland,
Young In Na,
Aristotelis Trapalis,
J. Heffernan
Publication year - 2021
Publication title -
nanotechnology
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.926
H-Index - 203
eISSN - 1361-6528
pISSN - 0957-4484
DOI - 10.1088/1361-6528/ac3617
Subject(s) - materials science , metalorganic vapour phase epitaxy , quantum dot , indium , epitaxy , optoelectronics , transmission electron microscopy , photoluminescence , layer (electronics) , crystallization , indium phosphide , nanotechnology , gallium arsenide , chemical engineering , engineering
InAs quantum dots (QDs) are grown on an In 0.53 Ga 0.47 As interlayer and embedded in an InP(100) matrix. They are fabricated via droplet epitaxy (DE) in a metal organic vapor phase epitaxy (MOVPE) reactor. Formation of metallic indium droplets on the In 0.53 Ga 0.47 As lattice-matched layer and their crystallization into QDs is demonstrated for the first time in MOVPE. The presence of the In 0.53 Ga 0.47 As layer prevents the formation of an unintentional non-stoichiometric 2D layer underneath and around the QDs, via suppression of the As-P exchange. The In 0.53 Ga 0.47 As layer affects the surface diffusion leading to a modified droplet crystallization process, where unexpectedly the size of the resulting QDs is found to be inversely proportional to the indium supply. Bright single dot emission is detected via micro-photoluminescence at low temperature, ranging from 1440 to 1600 nm, covering the technologically relevant telecom C-band. Transmission electron microscopy investigations reveal buried quantum dots with truncated pyramid shape without defects or dislocations.