Open AccessStrain-induced vibrational properties of few layer black phosphorus and MoTe2 via Raman spectroscopy
Author(s) -
Bhupendra Karki,
Byron Freelon,
Manthila Rajapakse,
Rajib Khan Musa,
S. M. Shah Riyadh,
Blake Morris,
Usman O. Abu,
Ming Yu,
Гамини Суманасекера,
Jacek B. Jasiński
Publication year - 2020
Publication title -
nanotechnology
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.926
H-Index - 203
eISSN - 1361-6528
pISSN - 0957-4484
DOI - 10.1088/1361-6528/aba13e
Subject(s) - raman spectroscopy , materials science , strain (injury) , phonon , black phosphorus , molecular vibration , ultimate tensile strength , spectroscopy , intercalation (chemistry) , stress (linguistics) , analytical chemistry (journal) , molecular physics , condensed matter physics , composite material , optics , optoelectronics , chemistry , inorganic chemistry , physics , medicine , linguistics , philosophy , chromatography , quantum mechanics
We studied and compared the effect of tensile strain on the Raman spectra of black phosphorus (BP) and molybdenum ditelluride (MoTe 2 ) crystals by using a simple custom strain device. In-situ Raman spectroscopy on BP revealed clear red shifting of all three phonon modes, A 1 g , B 2g and A 2 g , under tensile stress. From our theoretical analyses, we found that such red shifting strongly depends on the direction of the strain exerted on the system even within the elastic deformation limit ( i.e. strain ≤ 1 %). In particular, calculated results for the strain along the armchair direction are consistent with our experimental data, confirming that the strain applied to the sample acts effectively along the armchair direction. In a comparative study, we found that the effect of strain on the Raman shifting is larger for BP than that for MoTe 2 , presumably due to the smaller Young’s modulus of BP. We also see a remarkable resemblance between donor-type intercalation induced vibrational properties and tensile stress-induced vibrational properties in BP. We anticipate that our method of in-situ Raman spectroscopy can be an effective tool that can allow observation of strain effect directly which is critical for future flexible electronic devices.