Open AccessHybrid graphene-manganite thin film structure for magnetoresistive sensor application
Author(s) -
Rasuole Lukose,
N. Žurauskienė,
Saulius Balevičius,
Voitech Stankevič,
Skirmantas Keršulis,
Valentina Plaušinaitienė,
Romualdas Navickas
Publication year - 2019
Publication title -
nanotechnology
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.926
H-Index - 203
eISSN - 1361-6528
pISSN - 0957-4484
DOI - 10.1088/1361-6528/ab201d
Subject(s) - manganite , materials science , magnetoresistance , colossal magnetoresistance , graphene , wheatstone bridge , optoelectronics , nanotechnology , magnetic field , lorentz force , thin film , voltage , condensed matter physics , electrical engineering , ferromagnetism , resistor , physics , engineering , quantum mechanics
An increasing demand of magnetic field sensors with high sensitivity at room temperatures and spatial resolution at micro-nanoscales has resulted in numerous investigations of physical phenomena in advanced materials, and fabrication of novel magnetoresistive devices. In this study the novel magnetic field sensor based on combination of a single layer graphene (SLG) and thin nanostructured manganite La 0.8 Sr 0.2 MnO 3 (LSMO) film—hybrid graphene-manganite (GM) structure, is proposed and fabricated. The hybrid GM structure employs the properties of two materials—SLG and LSMO—on the nanoscale level and results in the enhanced sensitivity to magnetic field of the hybrid sensor on the macroscopic level. Such result is achieved by designing the hybrid GM sensor in a Wheatstone half-bridge which enables to employ in the device operation two effects of nanomaterials—large Lorentz force induced positive magnetoresistance of graphene and colossal negative magnetoresistance of nanostructured manganite film, and significantly increase the sensitivity S of the hybrid GM sensor in comparison with the individual SLG and LSMO sensors: S = 5.5 mV T −1 for SLG, 14.5 mV T −1 for LSMO and 20 mV T −1 for hybrid GM at 0.5 T, when supply voltage was 1.249 V. The hybrid GM sensor operates in the range of (0.1–2.3) T and has lower sensitivity to temperature variations in comparison to the manganite sensor. Moreover, it can be applied for position sensing. The ability to control sensor’s characteristics by changing technological conditions of the fabrication of hybrid structure and tuning the nanostructure properties of manganite film is discussed.