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Side-gated, enhancement mode, InAs nanowire double quantum dot devices—toward controlling transverse electric fields in spin-transport measurements
Author(s) -
Sven Dorsch,
B. Dalelkhan,
Sofia Fahlvik,
A. M. Burke
Publication year - 2019
Publication title -
nanotechnology
Language(s) - Uncategorized
Resource type - Journals
SCImago Journal Rank - 0.926
H-Index - 203
eISSN - 1361-6528
pISSN - 0957-4484
DOI - 10.1088/1361-6528/aafe5a
Subject(s) - materials science , nanowire , transverse plane , quantum dot , condensed matter physics , spin (aerodynamics) , electric field , mode (computer interface) , optoelectronics , transverse mode , optics , physics , quantum mechanics , engineering , thermodynamics , laser , computer science , operating system , structural engineering

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