Open AccessImpact of MoS 2 layer transfer on electrostatics of MoS 2 /SiO 2 interface
Author(s) -
V. V. Afanas’ev,
Daniele Chiappe,
Marta Perucchini,
Michel Houssa,
Cedric Huyghebaert,
Iuliana Radu,
A. Stesmans
Publication year - 2018
Publication title -
nanotechnology
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.926
H-Index - 203
eISSN - 1361-6528
pISSN - 0957-4484
DOI - 10.1088/1361-6528/aaf03f
Subject(s) - materials science , annealing (glass) , silanol , monolayer , electron , dipole , electron transfer , scattering , electrostatics , chemical physics , layer (electronics) , electron scattering , analytical chemistry (journal) , molecular physics , condensed matter physics , nanotechnology , optics , composite material , chemistry , biochemistry , catalysis , physics , chromatography , organic chemistry , quantum mechanics
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