Transformation of 2D group-III selenides to ultra-thin nitrides: enabling epitaxy on amorphous substrates
Author(s) -
Natalie Briggs,
Maria Isolina Preciado,
Yanfu Lu,
Ke Wang,
Jacob H. Leach,
Xufan Li,
Kai Xiao,
S. Subramanian,
Baoming Wang,
Aman Haque,
Susan B. Sinnott,
Joshua A. Robinson
Publication year - 2018
Publication title -
nanotechnology
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.926
H-Index - 203
eISSN - 1361-6528
pISSN - 0957-4484
DOI - 10.1088/1361-6528/aae0bb
Subject(s) - materials science , epitaxy , amorphous solid , nitride , indium , selenide , gallium , annealing (glass) , thin film , gallium nitride , optoelectronics , chalcogen , boron nitride , chemical engineering , nanotechnology , metallurgy , crystallography , layer (electronics) , selenium , chemistry , engineering
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