Open AccessElectron transport through NiSi2–Si contacts and their role in reconfigurable field-effect transistors
Author(s) -
Florian Fuchs,
Sibylle Gemming,
Jörg Schuster
Publication year - 2019
Publication title -
journal of physics. condensed matter
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.908
H-Index - 228
eISSN - 1361-648X
pISSN - 0953-8984
DOI - 10.1088/1361-648x/ab2310
Subject(s) - schottky barrier , transistor , materials science , field effect transistor , optoelectronics , perpendicular , orientation (vector space) , silicon , condensed matter physics , semiconductor , interface (matter) , schottky diode , electron , electrical engineering , physics , geometry , voltage , engineering , mathematics , diode , capillary number , capillary action , composite material , quantum mechanics