Ligand hyperfine interactions at silicon vacancies in 4H-SiC
Author(s) -
Nguyên Tiên Són,
Pontus Stenberg,
Valdas Jokubavičius,
Takeshi Ohshima,
Jawad UlHassan,
Ivan G. Ivanov
Publication year - 2019
Publication title -
journal of physics condensed matter
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.908
H-Index - 228
eISSN - 1361-648X
pISSN - 0953-8984
DOI - 10.1088/1361-648x/ab072b
Subject(s) - hyperfine structure , electron paramagnetic resonance , vacancy defect , spectral line , silicon , paramagnetism , chemistry , lattice (music) , crystallography , materials science , atomic physics , molecular physics , condensed matter physics , nuclear magnetic resonance , physics , optoelectronics , astronomy , acoustics
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