Open AccessA novel E-mode GaN p-MOSFET featuring charge storage layer with high current density
Author(s) -
Kuangli Chen,
Yuanzhang Su,
Jiajia Ruan,
Yonglian Cai,
Liyang Zhu,
Bo Zhang,
Qi Zhou
Publication year - 2022
Publication title -
journal of physics d applied physics
Language(s) - English
Resource type - Journals
eISSN - 1361-6463
pISSN - 0022-3727
DOI - 10.1088/1361-6463/ac8eba
Subject(s) - materials science , mosfet , optoelectronics , trench , transistor , current density , layer (electronics) , current (fluid) , mole fraction , electrical engineering , nanotechnology , chemistry , voltage , physics , quantum mechanics , engineering
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