Open AccessA comparison study of InGaN/GaN multiple quantum wells grown on (111) silicon and (0001) sapphire substrates under identical conditions
Author(s) -
Chenqi Zhu,
Ce Xu,
Peng Feng,
Xinchi Chen,
Guillem Martínez de Arriba,
J. Bai,
Tao Wang
Publication year - 2022
Publication title -
journal of physics. d, applied physics
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.857
H-Index - 198
eISSN - 1361-6463
pISSN - 0022-3727
DOI - 10.1088/1361-6463/ac8da4
Subject(s) - materials science , sapphire , optoelectronics , silicon , substrate (aquarium) , photoluminescence , light emitting diode , silicon on sapphire , epitaxy , quantum well , indium , gallium nitride , nanotechnology , optics , laser , silicon on insulator , layer (electronics) , physics , oceanography , geology