Open AccessInvestigation of multi-layered graphene/silicon Schottky junction in oxidizing atmosphere
Author(s) -
Filiberto Ricciardella,
Maria Arcangela Nigro,
Riccardo Miscioscia,
Maria Lucia Miglietta,
Tiziana Polichetti
Publication year - 2021
Publication title -
journal of physics. d, applied physics
Language(s) - English
Resource type - Journals
eISSN - 1361-6463
pISSN - 0022-3727
DOI - 10.1088/1361-6463/ac0d71
Subject(s) - graphene , oxidizing agent , schottky barrier , materials science , heterojunction , silicon , oxide , optoelectronics , atmosphere (unit) , schottky diode , nanotechnology , chemical engineering , chemistry , metallurgy , physics , organic chemistry , diode , engineering , thermodynamics
In this study, we investigate a Schottky junction based on solution-processed multilayered graphene (MLG). We present a rectifying device obtained with a straightforward approach, that is drop-casting a few microliters of MLG solution simultaneously onto Si, Si–SiO 2 and Si–SiO 2 –Cr/Au surface. Monitoring the modulation of Schottky barrier height while operating in reverse bias, we study the behavior of such prepared MLG-Si/junction (MLG-Si/J) when exposed to oxidizing atmosphere, especially to nitrogen oxide (NO 2 ). We finally compare the sensing behavior of MLG-Si/J at 1 ppm of NO 2 with that of a chemiresistor-based on similarly prepared solution-processed MLG. Our study thus opens the path towards low-cost highly sensitive graphene-based heterojunctions advantageously fabricated without any complexity in the technological process.