Open AccessElectronic mechanism for resistance drift in phase-change memory materials: link to persistent photoconductivity
Author(s) -
Stephen R. Elliott
Publication year - 2020
Publication title -
journal of physics d applied physics
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.857
H-Index - 198
eISSN - 1361-6463
pISSN - 0022-3727
DOI - 10.1088/1361-6463/ab795e
Subject(s) - materials science , photocurrent , photoconductivity , metastability , optoelectronics , semiconductor , amorphous solid , band gap , condensed matter physics , resistive random access memory , phase change memory , chemical physics , voltage , nanotechnology , electrical engineering , chemistry , physics , crystallography , organic chemistry , layer (electronics) , engineering
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