Open AccessA drift-diffusion simulation model for organic field effect transistors: on the importance of the Gaussian density of states and traps
Author(s) -
Mohammed Darwish,
Alessio Gagliardi
Publication year - 2019
Publication title -
journal of physics. d, applied physics
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.857
H-Index - 198
eISSN - 1361-6463
pISSN - 0022-3727
DOI - 10.1088/1361-6463/ab605d
Subject(s) - organic semiconductor , transistor , diffusion , field effect transistor , gaussian , charge (physics) , field (mathematics) , organic field effect transistor , materials science , chemical physics , electron mobility , threshold voltage , semiconductor , voltage , optoelectronics , chemistry , physics , computational chemistry , thermodynamics , quantum mechanics , mathematics , pure mathematics
The nature of charge transport in organic materials depends on several important aspects, such as the description of the density of states, and the charge mobility model. Therefore specific models describing electronic properties of organic semiconductors must be considered. We have used an organic based drift-diffusion model for the electrical characterization of organic field effect transistors (OFETs) utilizing either small molecules or polymers. Furthermore, the effect of interface traps, bulk traps, and fixed charges on transistor characteristics are included and investigated. Finally, simulation results are compared to experimental measurements, and conclusions are drawn out in terms of transistor performance parameters including threshold voltages, and field-dependent mobilities.