Open AccessSingle-electron current gain in a quantum dot with three leads
Author(s) -
Armin C Welker,
J. Weis
Publication year - 2019
Publication title -
journal of physics. d, applied physics
Language(s) - English
Resource type - Journals
eISSN - 1361-6463
pISSN - 0022-3727
DOI - 10.1088/1361-6463/ab5e75
Subject(s) - coulomb blockade , quantum dot , quantum tunnelling , conductance , excited state , electron , condensed matter physics , fermi level , transistor , electrode , gate voltage , heterojunction , chemistry , optoelectronics , atomic physics , physics , voltage , quantum mechanics
The conductance through a quantum dot (QD) between a source and a drain electrode is usually controlled electrostatically by a nearby gate electrode. A periodic modulation of the conductance versus gate voltage is observed, swapping between Coulomb blockade and single-electron tunneling. By controlling the Fermi level of a third (‘base’) lead attached to the QD, we were able to switch a single-electron current from source to drain, exceeding the single-electron current to or from the base lead. A simple model is presented revealing the role of ground- and excited states within the QD for this dynamic operation of a single-electron transistor.