Single-electron current gain in a quantum dot with three leads | Zendy

Armin C Welker | Zendy; J. Weis | Zendy

AI Assistant Blog Pricing

Home ZAIA Blog

Open Access

Single-electron current gain in a quantum dot with three leads

Author(s) -

Armin C Welker,

J. Weis

Publication year - 2019

Publication title -

journal of physics d applied physics

Language(s) - English

Resource type - Journals

eISSN - 1361-6463

pISSN - 0022-3727

DOI - 10.1088/1361-6463/ab5e75

Subject(s) - coulomb blockade , quantum dot , quantum tunnelling , conductance , excited state , electron , condensed matter physics , fermi level , transistor , electrode , gate voltage , heterojunction , chemistry , optoelectronics , atomic physics , physics , voltage , quantum mechanics

The conductance through a quantum dot (QD) between a source and a drain electrode is usually controlled electrostatically by a nearby gate electrode. A periodic modulation of the conductance versus gate voltage is observed, swapping between Coulomb blockade and single-electron tunneling. By controlling the Fermi level of a third (‘base’) lead attached to the QD, we were able to switch a single-electron current from source to drain, exceeding the single-electron current to or from the base lead. A simple model is presented revealing the role of ground- and excited states within the QD for this dynamic operation of a single-electron transistor.

The content you want is available to Zendy users.

Already have an account? Click here to sign in.

Having issues? You can contact us here

Accelerating Research