Open AccessComputational phase-change memory: beyond von Neumann computing
Author(s) -
Abu Sebastian,
Manuel Le Gallo,
Evangelos Eleftheriou
Publication year - 2019
Publication title -
journal of physics. d, applied physics
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.857
H-Index - 198
eISSN - 1361-6463
pISSN - 0022-3727
DOI - 10.1088/1361-6463/ab37b6
Subject(s) - von neumann architecture , in memory processing , phase change memory , computer science , memory map , computing with memory , computer memory , memristor , unconventional computing , memory management , resistive random access memory , interleaved memory , computer architecture , semiconductor memory , distributed computing , computer hardware , phase change , electronic engineering , engineering , electrical engineering , search engine , operating system , engineering physics , voltage , information retrieval , query by example , web search query
The explosive growth in data-centric artificial intelligence related applications necessitates a radical departure from traditional von Neumann computing systems, which involve separate processing and memory units. Computational memory is one such approach where certain tasks are performed in place in the memory itself. This is enabled by the physical attributes and state dynamics of the memory devices. Naturally, memory plays a central role in this computing paradigm for which emerging post-CMOS, non-volatile memory devices based on resistance-based information storage are particularly well suited. Phase-change memory is arguably the most advanced resistive memory technology and in this article we present a comprehensive review of in-memory computing using phase-change memory devices.