Open AccessHigh-pressure phase transition makes B4.3C boron carbide a wide-gap semiconductor
Author(s) -
Anwar Hushur,
Murli H. Manghnani,
H. Werheit,
Przemysław Dera,
Quentin Williams
Publication year - 2016
Publication title -
journal of physics condensed matter
Language(s) - Uncategorized
Resource type - Journals
SCImago Journal Rank - 0.908
H-Index - 228
eISSN - 1361-648X
pISSN - 0953-8984
DOI - 10.1088/0953-8984/28/4/045403
Subject(s) - boron carbide , raman spectroscopy , icosahedral symmetry , materials science , boron , semiconductor , carbide , band gap , phonon , condensed matter physics , phase transition , crystal (programming language) , phase (matter) , wide bandgap semiconductor , crystallography , chemistry , optoelectronics , optics , metallurgy , physics , programming language , organic chemistry , computer science
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