Open AccessUnified theory of silicon carbide oxidation based on the Si and C emission model
Author(s) -
Daisuke Goto,
Yasuto Hijikata
Publication year - 2016
Publication title -
journal of physics. d, applied physics
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.857
H-Index - 198
eISSN - 1361-6463
pISSN - 0022-3727
DOI - 10.1088/0022-3727/49/22/225103
Subject(s) - oxide , silicon carbide , materials science , growth rate , substrate (aquarium) , density functional theory , silicon , computational chemistry , composite material , chemistry , metallurgy , geometry , geology , oceanography , mathematics