Open AccessGate-tunable contact-induced Fermi-level shift in semimetal
Author(s) -
Xuanzhang Li,
Yang Wei,
Gaotian Lu,
Zhen Mei,
Guangqi Zhang,
Liang Liang,
Qunqing Li,
Shoushan Fan,
Yuegang Zhang
Publication year - 2022
Publication title -
proceedings of the national academy of sciences of the united states of america
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 5.011
H-Index - 771
eISSN - 1091-6490
pISSN - 0027-8424
DOI - 10.1073/pnas.2119016119
Subject(s) - semimetal , fermi level , schottky barrier , heterojunction , condensed matter physics , materials science , nanoelectronics , semiconductor , optoelectronics , nanotechnology , band gap , physics , electron , quantum mechanics , diode
Significance Resistivity comparison methodology was developed to measure and analyze the contact-induced Fermi-level shift (CIFS) as well as the interfacial charge transfer in low-dimensional semimetal–semiconductor (Sm-S) systems. The Fermi-level catch-up model was further built to depict the gate-tunable CIFS in such Sm-S systems. The Schottky barrier height for the Sm-S junction can be modified by introducing the CIFS term. The progress in this work will have an important role in promoting the research of Sm-S junctions, which are essential building blocks for future low-dimensional nanodevices.