Gate-tunable contact-induced Fermi-level shift in semimetal | Zendy

Xuanzhang Li | Zendy; Wei Yang | Zendy; Gaotian Lu | Zendy; Zhen Mei | Zendy; Guangqi Zhang | Zendy; Liang Liang | Zendy; Qunqing Li | Zendy; Shoushan Fan | Zendy; Yuegang Zhang | Zendy

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Gate-tunable contact-induced Fermi-level shift in semimetal

Author(s) -

Xuanzhang Li,

Wei Yang,

Gaotian Lu,

Zhen Mei,

Guangqi Zhang,

Liang Liang,

Qunqing Li,

Shoushan Fan,

Yuegang Zhang

Publication year - 2022

Publication title -

proceedings of the national academy of sciences

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 5.011

H-Index - 771

eISSN - 1091-6490

pISSN - 0027-8424

DOI - 10.1073/pnas.2119016119

Subject(s) - schottky barrier , fermi level , semimetal , condensed matter physics , semiconductor , work (physics) , materials science , fermi gamma ray space telescope , charge (physics) , optoelectronics , physics , band gap , quantum mechanics , diode , electron

Significance Resistivity comparison methodology was developed to measure and analyze the contact-induced Fermi-level shift (CIFS) as well as the interfacial charge transfer in low-dimensional semimetal–semiconductor (Sm-S) systems. The Fermi-level catch-up model was further built to depict the gate-tunable CIFS in such Sm-S systems. The Schottky barrier height for the Sm-S junction can be modified by introducing the CIFS term. The progress in this work will have an important role in promoting the research of Sm-S junctions, which are essential building blocks for future low-dimensional nanodevices.

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