The mechanism behind the high radiation tolerance of Fe–Cr alloys
Author(s) -
Sahil Agarwal,
Maik Butterling,
Maciej Oskar Liedke,
Kayla Yano,
Daniel K. Schreiber,
A. C. L. Jones,
Blas P. Uberuaga,
Yongqiang Wang,
M. Chancey,
H. Kim,
Benjamin K. Derby,
Nan Li,
Danny J. Edwards,
Peter Hosemann,
Djamel Kaoumi,
Eric Hirschmann,
A. Wagner,
F. A. Selim
Publication year - 2022
Publication title -
journal of applied physics
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.699
H-Index - 319
eISSN - 1089-7550
pISSN - 0021-8979
DOI - 10.1063/5.0085086
Subject(s) - radiation resistance , irradiation , materials science , positron annihilation spectroscopy , radiation damage , vacancy defect , doppler broadening , atom (system on chip) , radiation , limiting , ion , spectroscopy , chemical physics , atomic physics , crystallography , chemistry , positron annihilation , nuclear physics , spectral line , positron , physics , mechanical engineering , organic chemistry , quantum mechanics , astronomy , computer science , electron , embedded system , engineering
Fe–Cr alloys are at the forefront for high radiation tolerant materials with long-standing validated performance. Yet, the detailed mechanism behind their high radiation resistance is in question and understanding the effect of varying Cr percentage is a grand challenge limiting further improvements. Here, we applied depth-resolved positron annihilation lifetime spectroscopy and Doppler broadening spectroscopy to study the effect of Cr alloying on the formation and evolution of atomic size clusters induced by ion-irradiation in Fe. We also used atom probe tomography to investigate the possible presence of Cr clusters or α′ phase precipitates with high Cr composition. The study reveals that the well-known resistance to radiation in Fe–Cr alloys may arise from the stabilization of vacancy clusters around Cr atoms, which act as sinks for radiation-induced defects. This implies that Cr atoms do not provide a direct sink for interstitials; rather defect complexes that consist of Cr atoms and vacancies, in turn, act as sinks for irradiation-induced vacancies and interstitials. we also find that lower amounts of Cr create smaller defect clusters that act as efficient sinks for radiation damage, but larger quantities of Cr form a defect structure that is less homogenous and larger in size, resulting in less efficient damage recombination. No evidence of α′ was found before or after irradiation, which indicates that it does not contribute to the observed radiation tolerance.
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