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Study of recrystallization and activation processes in thin and highly doped silicon-on-insulator layers by nanosecond laser thermal annealing
Author(s) -
Nicolas Chery,
M. Zhang,
Richard Monflier,
Nicolas Mallet,
G. Seine,
Vincent Paillard,
J. M. Poumirol,
Guilhem Larrieu,
A.S. Royet,
S. Kerdilès,
P. Acosta-Alba,
Michele Perego,
C. Bonafos,
F. Cristiano
Publication year - 2022
Publication title -
journal of applied physics
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.699
H-Index - 319
eISSN - 1089-7550
pISSN - 0021-8979
DOI - 10.1063/5.0073827
Subject(s) - materials science , recrystallization (geology) , annealing (glass) , silicon , nucleation , doping , hillock , thin film , dopant , silicon on insulator , surface roughness , ion implantation , optoelectronics , analytical chemistry (journal) , composite material , nanotechnology , chemistry , paleontology , organic chemistry , biology , ion , chromatography

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