Growth of highly conductive Al-rich AlGaN:Si with low group-III vacancy concentration | Zendy

Abdullah Almogbel | Zendy; Christian J. Zollner | Zendy; Burhan K. SaifAddin | Zendy; Michael Iza | Zendy; Jianfeng Wang | Zendy; Yifan Yao | Zendy; Michael Wang | Zendy; Humberto M. Foronda | Zendy; Igor Prozheev | Zendy; F. Tuomisto | Zendy; Abdulrahman Albadri | Zendy; Shuji Nakamura | Zendy; Steven P. DenBaars | Zendy; James S. Speck | Zendy

AI Assistant Blog Pricing

Home ZAIA Blog

Open Access

Growth of highly conductive Al-rich AlGaN:Si with low group-III vacancy concentration

Author(s) -

Abdullah Almogbel,

Christian J. Zollner,

Burhan K. SaifAddin,

Michael Iza,

Jianfeng Wang,

Yifan Yao,

Michael Wang,

Humberto M. Foronda,

Igor Prozheev,

F. Tuomisto,

Abdulrahman Albadri,

Shuji Nakamura,

Steven P. DenBaars,

James S. Speck

Publication year - 2021

Publication title -

aip advances

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 0.421

H-Index - 58

ISSN - 2158-3226

DOI - 10.1063/5.0066652

Subject(s) - trimethylindium , electrical resistivity and conductivity , materials science , chemical vapor deposition , silicon , conductivity , metalorganic vapour phase epitaxy , shallow donor , secondary ion mass spectrometry , impurity , analytical chemistry (journal) , condensed matter physics , ion , optoelectronics , chemistry , doping , epitaxy , nanotechnology , layer (electronics) , physics , engineering , organic chemistry , chromatography , electrical engineering

The content you want is available to Zendy users.

Already have an account? Click here to sign in.

Having issues? You can contact us here

Accelerating Research