Open AccessRole of deep levels and barrier height lowering in current-flow mechanism in 150 μm thick epitaxial n-type 4H–SiC Schottky barrier radiation detectors
Author(s) -
Joshua W. Kleppinger,
Sandeep K. Chaudhuri,
OmerFaruk Karadavut,
Krishna C. Mandal
Publication year - 2021
Publication title -
applied physics letters
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 1.182
H-Index - 442
eISSN - 1077-3118
pISSN - 0003-6951
DOI - 10.1063/5.0064036
Subject(s) - schottky barrier , deep level transient spectroscopy , schottky diode , diode , optoelectronics , materials science , current (fluid) , metal–semiconductor junction , physics , silicon , thermodynamics
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