Open AccessElectrical properties of high permittivity epitaxial SrCaTiO3 grown on AlGaN/GaN heterostructures
Author(s) -
Eric N. Jin,
Brian P. Downey,
Vikrant J. Gokhale,
J.A. Roussos,
Matthew T. Hardy,
Tyler A. Growden,
Neeraj Nepal,
D. S. Katzer,
J.P. Calame,
David J. Meyer
Publication year - 2021
Publication title -
apl materials
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 1.571
H-Index - 60
ISSN - 2166-532X
DOI - 10.1063/5.0063295
Subject(s) - materials science , optoelectronics , heterojunction , molecular beam epitaxy , dielectric , permittivity , electron mobility , wide bandgap semiconductor , epitaxy , layer (electronics) , nanotechnology
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