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Experimental study of the series resistance effect and its impact on the compact modeling of the conduction characteristics of HfO2-based resistive switching memories
Author(s) -
D. Maldonado,
Fernando Aguirre,
Gerardo González-Cordero,
A. Roldán,
Mireia Bargalló González,
F. Jiménez-Molinos,
F. Campabadal,
E. Miranda,
J.B. Roldán
Publication year - 2021
Publication title -
journal of applied physics
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.699
H-Index - 319
eISSN - 1089-7550
pISSN - 0021-8979
DOI - 10.1063/5.0055982
Subject(s) - resistive random access memory , thermal conduction , reset (finance) , context (archaeology) , snapback , materials science , equivalent series resistance , resistive touchscreen , series (stratigraphy) , voltage , electronic engineering , electrical engineering , engineering , transistor , paleontology , financial economics , economics , composite material , biology

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