Open AccessAnalytical drain current and performance evaluation for inversion type InGaAs gate-all-around MOSFET
Author(s) -
I. K. M. Reaz Rahman,
Md Irfan Khan,
Quazi D. M. Khosru
Publication year - 2021
Publication title -
aip advances
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.421
H-Index - 58
ISSN - 2158-3226
DOI - 10.1063/5.0052718
Subject(s) - channel length modulation , drain induced barrier lowering , materials science , subthreshold slope , short channel effect , mosfet , threshold voltage , subthreshold conduction , transistor , optoelectronics , gate dielectric , capacitance , poisson's equation , scaling , gate oxide , dielectric , velocity saturation , computational physics , voltage , electrical engineering , chemistry , physics , engineering , mathematics , geometry , electrode , quantum mechanics
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