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Deep level study of chlorine-based dry etched β − Ga2O3
Author(s) -
Giovanni Alfieri,
Andrei Mihaila,
Philippe Godig,
Joel B. Varley,
Lasse Vines
Publication year - 2021
Publication title -
journal of applied physics
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.699
H-Index - 319
eISSN - 1089-7550
pISSN - 0021-8979
DOI - 10.1063/5.0050416
Subject(s) - chlorine , plasma , reactive ion etching , conduction band , schottky diode , ion , etching (microfabrication) , chemistry , dry etching , range (aeronautics) , diode , analytical chemistry (journal) , materials science , optoelectronics , atomic physics , nanotechnology , physics , environmental chemistry , organic chemistry , layer (electronics) , quantum mechanics , composite material , electron

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